Researchers at Tohoku University have announced the development of a new magnetic tunnel junction, by which the team has demonstrated an extended retention time for digital information without an ...
Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient ...
Researchers at Tohoku University have developed guidelines for a single-nanometer magnetic tunnel junction (MTJ), allowing for performance tailoring to meet the requirements of diverse applications, ...
The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record which had stood for 15 years.
Embedded Flash memory technology is limited by scaling difficulties in Flash below 28nm CMOS processes. The discovery, and later the industrial manufacturing of Spin-Transfer-Torque (STT) MRAMs, ...
Magnetic tunnel junctions (MTJs) have played a central role in spintronic devices, and researchers are working to improve their performance. A prominent achievement that accelerated the technology's ...
Editor’s note: This work was first presented at the 2011 IEEE International Electron Devices Meeting (IEDM) and appears here courtesy of the IEEE. For more information about IEDM 2012 (San Francisco, ...
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